Surface states and 1/f noise in MOS transistors
Surface-state density in n-channel MOS transistors operating in the inversion mode has been determined from the channel conductance and related to 1/ <tex xmlns:mml="http://www....
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- h-index
- 1
- Publications
- 1
- Citations
- 67
- Institution
- Philips (United States)
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h-index: Number of publications with at least h citations each.