Dependence of electron mobility on spatial separation of electrons and donors in Al<i>x</i>Ga1−<i>x</i>As/GaAs heterostructures
Single-period modulation doped A1xGa1−x As/GaAs heterojunctions have been prepared by molecular beam epitaxy (MBE). Heterojunctions with a Si-doped A1xGa1−x As layer grown on an...