Abstract
The complex index of refraction N=n−ik for amorphous SiO2 is derived in the energy range 0.03–1.0 eV by Kramers-Kronig analysis of reflectance data. The results are used to compute the transmission, reflectance, and absorptivity of thin layers of SiO2 on Si substrates in the vicinity of the 0.14-eV (9 μ) lattice absorption band of SiO2. The dependence of these quantities on the layer thickness and angle of incidence is discussed.
Keywords
Molar absorptivityRefractive indexMaterials scienceSiliconInfraredReflectivityKramers–Kronig relationsAmorphous solidAmorphous siliconRefractionOpticsAttenuation coefficientAbsorption (acoustics)Angle of incidence (optics)Thin filmOptoelectronicsChemistryCrystalline siliconPhysicsCrystallographyNanotechnology
Affiliated Institutions
Related Publications
Built-Up Films of Barium Stearate and Their Optical Properties
The technique of depositing successive single layers of molecules of various stearates on a solid surface is described. Films containing 3001 layers have been built of barium-co...
Optical Properties and Electronic Structure of Amorphous Germanium
Abstract The optical constants of amorphous Ge are determined for the photon energies from 0.08 to 1.6 eV. From 0.08 to 0.5 eV, the absorption is due to k ‐conserving transition...
Absorption of Infrared Light by Free Carriers in Germanium
The absorption of infrared light associated with the presence of free carriers in germanium has been measured by injecting these carriers across a $p\ensuremath{-}n$ junction at...
Electronic States in Vitreous Selenium
The quantum efficiency for photoproduction of electrons and holes in vitreous selenium has been measured at room temperature for photon energies between 2.0 and 3.1 eV. Electron...
Theory of the Infrared Absorption of Carriers in Germanium and Silicon
The Drude-Zener theory of optical absorption by free carriers is applied to the infrared absorption of $n$-type germanium and $p$-type silicon. Average effective masses so deter...
Publication Info
- Year
- 1979
- Type
- article
- Volume
- 50
- Issue
- 2
- Pages
- 1053-1057
- Citations
- 101
- Access
- Closed
External Links
Social Impact
Altmetric
PlumX Metrics
Social media, news, blog, policy document mentions
Citation Metrics
101
OpenAlex
Cite This
Herbert R. Philipp
(1979).
The infrared optical properties of SiO2 and SiO2 layers on silicon.
Journal of Applied Physics
, 50
(2)
, 1053-1057.
https://doi.org/10.1063/1.326080
Identifiers
- DOI
- 10.1063/1.326080