Abstract

Schottky barrier avalanche photodiodes have been fabricated in Ga1−xAlxAs1−ySby. The devices are planar and have semitransparent Au barriers. In addition, these detectors exhibit uniform photoresponse and dark current densities of ∼2.7×10−3 A/cm3 at the voltages where avalanche gains of 2 to 4 have been measured. This is the first report of avalanche gain in such a structure in the Ga1−xAlxAs1−ySby alloy system.

Keywords

Schottky barrierPhotodetectorAvalanche photodiodeDark currentOptoelectronicsSchottky diodePlanarAvalanche breakdownMaterials scienceAlloyPhotodiodeDetectorMetal–semiconductor junctionBreakdown voltageVoltageOpticsPhysicsDiodeMetallurgy

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Publication Info

Year
1980
Type
article
Volume
37
Issue
6
Pages
550-551
Citations
25
Access
Closed

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R. Chin, H. D. Law, K. Nakano et al. (1980). Schottky barrier Ga1−<i>x</i>Al<i>x</i>As1−<i>y</i>Sb<i>y</i> alloy avalanche photodetectors. Applied Physics Letters , 37 (6) , 550-551. https://doi.org/10.1063/1.91982

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DOI
10.1063/1.91982