Abstract
A rapid and reversible transition between a highly resistive and conductive state effected by an electric field, which we have observed in various types of disordered semiconducting material, is described in detail. The switching parameters and chemical composition of a typical material are presented, and microscopic mechanisms for the conduction phenomena are suggested.
Keywords
Materials scienceThermal conductionElectrical conductorElectric fieldCondensed matter physicsElectrical conductionElectrical resistivity and conductivityChemical physicsPhysics
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Publication Info
- Year
- 1968
- Type
- article
- Volume
- 21
- Issue
- 20
- Pages
- 1450-1453
- Citations
- 3076
- Access
- Closed
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Cite This
Stanford R. Ovshinsky
(1968).
Reversible Electrical Switching Phenomena in Disordered Structures.
Physical Review Letters
, 21
(20)
, 1450-1453.
https://doi.org/10.1103/physrevlett.21.1450
Identifiers
- DOI
- 10.1103/physrevlett.21.1450