Abstract
The luminescence mechanism in a-C:H is described as a modification of the band tail luminescence in hydrogenated amorphous Si. The tail states of a-C:H are formed from clusters of ${\mathit{sp}}^{2}$ sites and luminescence occurs by recombination within each cluster. The paramagnetic defects are confirmed as the nonradiative recombination centers. The weaker temperature dependence of the luminescence efficiency of a-C:H than a-Si:H is attributed to its wider tails which inhibit carrier hopping. The luminescence efficiency is also quenched by narrow optical gaps, because carriers can tunnel to defects more easily in the ${\mathit{sp}}^{2}$-rich, narrow-gap a-C:H. Defect quenching is less strong, however, because of the shorter Bohr radius of localized states in a-C:H. \textcopyright{} 1996 The American Physical Society.
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Publication Info
- Year
- 1996
- Type
- article
- Volume
- 53
- Issue
- 24
- Pages
- 16302-16305
- Citations
- 314
- Access
- Closed
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- DOI
- 10.1103/physrevb.53.16302