Abstract
A transmission electron microscopy study of porous silicon reveals that pores selectively propagate in the 〈100〉 crystallographic directions on both n- and p-type silicon, independent of dopant concentration or anodization conditions.
Keywords
Transmission electron microscopySiliconPorous siliconMaterials scienceDopantElectron microscopeAnodizingPorosityPorous mediumCrystallographyChemical physicsChemical engineeringNanotechnologyOptoelectronicsComposite materialDopingChemistryOpticsAluminiumPhysics
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Publication Info
- Year
- 1989
- Type
- article
- Volume
- 55
- Issue
- 7
- Pages
- 675-677
- Citations
- 128
- Access
- Closed
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Cite This
S.-F. Chuang,
Scott D. Collins,
R. L. Smith
(1989).
Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study.
Applied Physics Letters
, 55
(7)
, 675-677.
https://doi.org/10.1063/1.101819
Identifiers
- DOI
- 10.1063/1.101819