Abstract

A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.

Keywords

PhotoluminescenceMonolayerIntercalation (chemistry)Molybdenum disulfideMaterials scienceAnnealing (glass)Exfoliation jointMetastabilityBand gapSemiconductorNanotechnologyChemical engineeringCrystallographyInorganic chemistryOptoelectronicsGrapheneChemistryComposite materialOrganic chemistry

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Year
2011
Type
article
Volume
11
Issue
12
Pages
5111-5116
Citations
3756
Access
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Goki Eda, Hisato Yamaguchi, Damien Voiry et al. (2011). Photoluminescence from Chemically Exfoliated MoS<sub>2</sub>. Nano Letters , 11 (12) , 5111-5116. https://doi.org/10.1021/nl201874w

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DOI
10.1021/nl201874w