Phonon renormalization in doped bilayer graphene

Anindya Das; B. Chakraborty; S. Piscanec; Simone Pisana; Anil K. Sood; Andrea C. Ferrari

doi:10.1103/physrevb.79.155417

Abstract

We report phonon renormalisation in bilayer graphene as a function of doping.\nThe Raman G peak stiffens and sharpens for both electron and hole doping, as a\nresult of the non-adiabatic Kohn anomaly at the $\\Gamma$ point. The bilayer has\ntwo conduction and valence subbands, with splitting dependent on the interlayer\ncoupling. This results in a change of slope in the variation of G peak position\nwith doping, which allows a direct measurement of the interlayer coupling\nstrength.\n

Keywords

Condensed matter physicsBilayer grapheneDopingRaman spectroscopyBilayerRenormalizationPhononMaterials scienceValence (chemistry)GraphenePhysicsChemistryNanotechnologyQuantum mechanics

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Publication Info

Year: 2009
Type: article
Volume: 79
Issue: 15
Citations: 284
Access: Closed

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APA Style

                            
                                
                                    Anindya Das, 
                                
                                    B. Chakraborty, 
                                
                                    S. Piscanec
                                
                                et al.
                            
                            (2009). 
                            Phonon renormalization in doped bilayer graphene. 
                            Physical Review B
                            , 79
                            (15)
                            .
                            https://doi.org/10.1103/physrevb.79.155417
                        

Identifiers

DOI: 10.1103/physrevb.79.155417