Abstract
We have measured the resistance of electron inversion layers in Si metal-oxide-semiconductor field-effect transistors at low temperatures (\ensuremath{\sim}50 mK) and low electric fields (\ensuremath{\sim}0.1 V/m). At low values of ${R}_{\ensuremath{\square}}$ we observe logarithmic dependences of the resistance on both temperature and applied electric field which scale only on ${R}_{\ensuremath{\square}}$. We observe a gradual transition to an exponential dependence at ${R}_{\ensuremath{\square}}\ensuremath{\gtrsim}10$ k\ensuremath{\Omega}. The logarithmic dependences agree qualitatively but not quantitatively with current theories of localization.
Keywords
Condensed matter physicsOmegaElectronLogarithmElectric fieldPhysicsThermal conductionSquare (algebra)Electrical resistivity and conductivityExponential functionElectrical resistance and conductanceMaterials scienceQuantum mechanics
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Publication Info
- Year
- 1980
- Type
- article
- Volume
- 44
- Issue
- 17
- Pages
- 1153-1156
- Citations
- 295
- Access
- Closed
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Cite This
D. J. Bishop,
D. C. Tsui,
R. C. Dynes
(1980).
Nonmetallic Conduction in Electron Inversion Layers at Low Temperatures.
Physical Review Letters
, 44
(17)
, 1153-1156.
https://doi.org/10.1103/physrevlett.44.1153
Identifiers
- DOI
- 10.1103/physrevlett.44.1153