Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs

Abstract

Molecular beam epitaxy has been used to grow single-crystal Fe/Cr magnetic multilayer structures on homoepitaxial (001)GaAs layers. The epitaxial relationships between Fe, Cr, and GaAs were determined by in situ reflection high-energy electron diffraction. The sharpness of the different interfaces of the Fe/Cr multilayers is illustrated by Auger electron spectroscopy sputter depth profiling, which shows that no significant intermixing occurs in the investigated growth temperature range −50 to +50 °C.

Keywords

Molecular beam epitaxyEpitaxyAuger electron spectroscopyMaterials scienceElectron diffractionSputteringReflection high-energy electron diffractionCrystal growthCrystallographyDiffractionThin filmOptoelectronicsChemistryOpticsNanotechnologyLayer (electronics)

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Publication Info

Year: 1988
Type: article
Volume: 53
Issue: 2
Pages: 162-164
Citations: 29
Access: Closed

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APA Style

                            
                                
                                    P. Étienne, 
                                
                                    G. Creuzet, 
                                
                                    A. Friederich
                                
                                et al.
                            
                            (1988). 
                            Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs. 
                            Applied Physics Letters
                            , 53
                            (2)
                            , 162-164.
                            https://doi.org/10.1063/1.100353
                        

Identifiers

DOI: 10.1063/1.100353