Keywords
TransistorElectron mobilityOptoelectronicsMaterials scienceField-effect transistorGate dielectricMonolayerDielectricMetal gateThin-film transistorInduced high electron mobility transistorLayer (electronics)NanotechnologyPhysicsGate oxideVoltage
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Publication Info
- Year
- 2013
- Type
- letter
- Volume
- 8
- Issue
- 3
- Pages
- 146-147
- Citations
- 496
- Access
- Closed
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Cite This
Michael S. Fuhrer,
James Hone
(2013).
Measurement of mobility in dual-gated MoS2 transistors.
Nature Nanotechnology
, 8
(3)
, 146-147.
https://doi.org/10.1038/nnano.2013.30
Identifiers
- DOI
- 10.1038/nnano.2013.30