Abstract

We study the evolution with pressure P and band filling y of the heat capacity, Hall coefficient, and resistivity at the approach to the T→0 Mott-Hubbard metal-insulator transition (MIT) in highly correlated V_(2-y)O_3. Under P, the electronic effective mass m* diverges at the MIT with a negligible change in carrier concentration n away from half-filling. Conversely, in the doped system m* actually decreases as the MIT is approached, while n increases linearly with y. The low-T magnetic order in the metal helps us deconvolute contributions from charge correlations and spin fluctuations.

Keywords

Condensed matter physicsPhysicsEffective mass (spring–mass system)Mott insulatorMott transitionOrder (exchange)Hubbard modelElectrical resistivity and conductivityMetal–insulator transitionHall effectStrongly correlated materialDopingSpin (aerodynamics)ElectronSuperconductivityQuantum mechanicsThermodynamics

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Publication Info

Year
1993
Type
article
Volume
48
Issue
22
Pages
16841-16844
Citations
94
Access
Closed

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Cite This

S. A. Carter, T. F. Rosenbaum, P. Metcalf et al. (1993). Mass enhancement and magnetic order at the Mott-Hubbard transition. Physical review. B, Condensed matter , 48 (22) , 16841-16844. https://doi.org/10.1103/physrevb.48.16841

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DOI
10.1103/physrevb.48.16841