Abstract
Magnetotransport measurements provide an ideal probe to determine the various anisotropy energies in epitaxial magnetic films. The extraordinary Hall effect (EHE) can be used to determine the perpendicular or surface anisotropy energy while the anisotropic magnetoresistance (AMR) can be used to investigate the in-plane anisotropy energies. The advantage of magnetotransport over more tranditional measurement techniques used to determine these anisotropy energies is the ease of the technique, the lack of a need for sophisticated equipment, and the insensitivity of the techniques to the magnetic properties of a semiconducting or insulating substrate. Both the EHE and the AMR have been used to study the magnetic properties of epitaxial iron films grown on GaAs substrates. The results of the EHE and the AMR study and how the various anisotropy energies compare with those determined by the more traditional techniques of ferromagnetic resonance and vibrating sample magnetometry will be discussed.
Keywords
Affiliated Institutions
Related Publications
Magnetic properties of sandwiches and superlattices of fcc Fe(001) grown on Cu(001) substrates
The magnetic properties of Cu/Fe epitaxial sandwiches and superlattices have been measured using Brillouin light scattering and ferromagnetic resonance. All of the samples are p...
Making Nonmagnetic Semiconductors Ferromagnetic
REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make ...
Electrical transport properties of thin epitaxially grown iron films
We have determined the components of the magnetoresistance tensor through the fifth order in the magnetization direction cosines for four epitaxially grown iron films with thick...
Magnetotransport properties of<i>p</i>-type (In,Mn)As diluted magnetic III-V semiconductors
Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3...
Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited)
Low-temperature molecular beam epitaxy allows one to dope GaAs with Mn over its solubility limit, making it possible to realize a III–V-based diluted magnetic semiconductor (Ga,...
Publication Info
- Year
- 1988
- Type
- article
- Volume
- 63
- Issue
- 8
- Pages
- 4270-4275
- Citations
- 113
- Access
- Closed
External Links
Social Impact
Social media, news, blog, policy document mentions
Citation Metrics
Cite This
Identifiers
- DOI
- 10.1063/1.340200