Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography

S. A. Rishton; Yuan Lü; R. A. Altman; A. C. Marley; X. Bian; C. Jahnes; R. Viswanathan; Gang Xiao; W. J. Gallagher; S. Parkin

doi:10.1016/s0167-9317(96)00107-4

Keywords

PermalloyMaterials scienceElectron-beam lithographyMicroelectronicsLithographyFocused ion beamOptoelectronicsThin filmSputteringTunnel junctionTunnel magnetoresistanceNanometreNanotechnologyResistQuantum tunnellingIonMagnetic fieldComposite materialLayer (electronics)MagnetizationChemistry

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Publication Info

Year: 1997
Type: article
Volume: 35
Issue: 1-4
Pages: 249-252
Citations: 71
Access: Closed

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APA Style

                            
                                
                                    S. A. Rishton, 
                                
                                    Yuan Lü, 
                                
                                    R. A. Altman
                                
                                et al.
                            
                            (1997). 
                            Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography. 
                            Microelectronic Engineering
                            , 35
                            (1-4)
                            , 249-252.
                            https://doi.org/10.1016/s0167-9317(96)00107-4
                        

Identifiers

DOI: 10.1016/s0167-9317(96)00107-4