Abstract

Luminescent aggregates of various types have been produced in quenched CsI:Pb single crystals by their annealing in vacuum at temperatures from 220 to 370 °C for 18 to 137 h. It has been found that the relative concentrations of different aggregates depend on thermal treatment conditions. Their optical characteristics obtained at 4.2—300 K have been compared with the corresponding characteristics of CsPbI3 and Cs4PbI6 single crystals as well as with the characteristics of CsPbI3 and Cs4PbI6-type aggregates in CsI–PbI2 thin films. The absorption band located near 411 nm and the emission bands peaking at 465, 535 and ≈600 nm have all been ascribed to the CsPbI3-type aggregates dispersed in a CsI single crystal matrix. The emission band peaking at 435 nm and the corresponding excitation bands at 362 and 288 nm have been ascribed to the Cs4PbI6-type aggregates. The mechanism of the creation of aggregates in a CsI:Pb crystal has been discussed.

Keywords

LuminescenceMaterials scienceChemistryCrystallographyOptoelectronics

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Publication Info

Year
2001
Type
article
Volume
226
Issue
2
Pages
419-428
Citations
27
Access
Closed

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Vladimír Babin, P. Fabeni, M. Nikl et al. (2001). Luminescent CsPbI3 and Cs4PbI6 Aggregates in Annealed CsI:Pb Crystals. physica status solidi (b) , 226 (2) , 419-428. https://doi.org/10.1002/1521-3951(200108)226:2<419::aid-pssb419>3.0.co;2-c

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DOI
10.1002/1521-3951(200108)226:2<419::aid-pssb419>3.0.co;2-c