Abstract
The introduction of an undoped (AlGa)As spacer enhances significantly the low-temperature mobility in modulation-doped GaAs-(AlGa)As superlattices. Mobilities increase monotonically with spacer thickness. This indicates that ionized impurity scattering can be further suppressed by increasing the separation between carriers and their parent donors. Hall mobilities of 93 000 cm2/V sec were observed for average Hall densities of 4.9×1016 cm−3 at 4.2 K.
Keywords
SuperlatticeHall effectImpurityElectron mobilityMaterials scienceCondensed matter physicsDopingScatteringIonizationModulation (music)OptoelectronicsElectrical resistivity and conductivityChemistryOpticsPhysicsIon
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Publication Info
- Year
- 1981
- Type
- article
- Volume
- 38
- Issue
- 9
- Pages
- 691-693
- Citations
- 172
- Access
- Closed
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Cite This
H. L. Störmer,
A. Pinczuk,
A. C. Gossard
et al.
(1981).
Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices.
Applied Physics Letters
, 38
(9)
, 691-693.
https://doi.org/10.1063/1.92481
Identifiers
- DOI
- 10.1063/1.92481