Abstract
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on\ntwo-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and\nMoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V\nstudy of MOSFET structures shows good interface between 2D MoS2 crystal and ALD\nAl2O3. Maximum drain currents using back-gates and top-gates are measured to be\n7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 {\\mu}m, a channel\nlength of 9 {\\mu}m, and a top-gate length of 3 {\\mu}m. We achieve the highest\nfield-effect mobility of electrons using back-gate control to be 517 cm^2/Vs.\nThe highest current on/off ratio is over 10^8.\n
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Publication Info
- Year
- 2012
- Type
- article
- Volume
- 33
- Issue
- 4
- Pages
- 546-548
- Citations
- 407
- Access
- Closed
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Cite This
Han Liu,
Peide D. Ye,
Han Liu
et al.
(2012).
$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric.
IEEE Electron Device Letters
, 33
(4)
, 546-548.
https://doi.org/10.1109/led.2012.2184520
Identifiers
- DOI
- 10.1109/led.2012.2184520