Graphene segregated on Ni surfaces and transferred to insulators

Abstract

We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality.

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Publication Info

Year: 2008
Type: article
Volume: 93
Issue: 11
Citations: 1154
Access: Closed

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APA Style

                            
                                
                                    Qingkai Yu, 
                                
                                    Jie Lian, 
                                
                                    Sujitra Siriponglert
                                
                                et al.
                            
                            (2008). 
                            Graphene segregated on Ni surfaces and transferred to insulators. 
                            Applied Physics Letters
                            , 93
                            (11)
                            .
                            https://doi.org/10.1063/1.2982585
                        

Identifiers

DOI: 10.1063/1.2982585