Abstract

Two-dimensional graphene monolayers and bilayers exhibit fascinating electrical transport behaviors. Using infrared spectroscopy, we find that they also have strong interband transitions and that their optical transitions can be substantially modified through electrical gating, much like electrical transport in field-effect transistors. This gate dependence of interband transitions adds a valuable dimension for optically probing graphene band structure. For a graphene monolayer, it yields directly the linear band dispersion of Dirac fermions, whereas in a bilayer, it reveals a dominating van Hove singularity arising from interlayer coupling. The strong and layer-dependent optical transitions of graphene and the tunability by simple electrical gating hold promise for new applications in infrared optics and optoelectronics.

Keywords

GrapheneVan Hove singularityBilayer grapheneMonolayerDirac fermionMaterials scienceCondensed matter physicsGatingOptoelectronicsBand gapNanotechnologyPhysicsQuantum mechanics

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Publication Info

Year
2008
Type
article
Volume
320
Issue
5873
Pages
206-209
Citations
1590
Access
Closed

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Cite This

Feng Wang, Yuanbo Zhang, Chuanshan Tian et al. (2008). Gate-Variable Optical Transitions in Graphene. Science , 320 (5873) , 206-209. https://doi.org/10.1126/science.1152793

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DOI
10.1126/science.1152793