Abstract
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Keywords
Very-large-scale integrationTransistorGraduate studentsComputer scienceElectrical engineeringSilicon on insulatorElectronic engineeringVariety (cybernetics)Engineering physicsComputer architectureNanotechnologySiliconComputer engineeringEngineeringMaterials scienceOptoelectronicsPsychologyArtificial intelligencePedagogyVoltage
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Publication Info
- Year
- 2021
- Type
- book
- Citations
- 729
- Access
- Closed
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Cite This
Yuan Taur,
T.H. Ning
(2021).
Fundamentals of Modern VLSI Devices.
Cambridge University Press eBooks
.
https://doi.org/10.1017/9781108847087
Identifiers
- DOI
- 10.1017/9781108847087