Abstract
A self-consistent calculation of $\frac{n}{B}$ (inversion layer carrier density divided by magnetic field strength) vs $\frac{1}{B}$ exhibits quantized values over finite ranges of $B$ (plateaus), just as seen in the Hall-resistance measurements of Tsui and Gossard. Electrons here in the inversion layer come from the ionized donors which, because of band bending, have a continuous energy density of states. These states fill or empty as the energy of Landau levels sweeps past them, producing the plateaus.
Keywords
HeterojunctionCondensed matter physicsQuantum Hall effectInversion (geology)Landau quantizationBand bendingMagnetic fieldElectronPhysicsHall effectHall conductivityElectron densityDensity of statesQuantum mechanicsGeology
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Publication Info
- Year
- 1981
- Type
- article
- Volume
- 24
- Issue
- 4
- Pages
- 2274-2277
- Citations
- 122
- Access
- Closed
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Cite This
G. A. Baraff,
D. C. Tsui
(1981).
Explanation of quantized-Hall-resistance plateaus in heterojunction inversion layers.
Physical review. B, Condensed matter
, 24
(4)
, 2274-2277.
https://doi.org/10.1103/physrevb.24.2274
Identifiers
- DOI
- 10.1103/physrevb.24.2274