Energy band structure in p-type germanium and silicon

1956 Journal of Physics and Chemistry of Solids 704 citations

Keywords

GermaniumSiliconDegenerate energy levelsElectronic band structureChemistryAtomic physicsCyclotron resonanceValence (chemistry)SemimetalSpin–orbit interactionValence bandMolecular physicsCyclotronCondensed matter physicsPhysicsBand gapQuantum mechanicsIon

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Year
1956
Type
article
Volume
1
Issue
1-2
Pages
82-99
Citations
704
Access
Closed

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E. O. Kane (1956). Energy band structure in p-type germanium and silicon. Journal of Physics and Chemistry of Solids , 1 (1-2) , 82-99. https://doi.org/10.1016/0022-3697(56)90014-2

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DOI
10.1016/0022-3697(56)90014-2