Abstract
The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2-1 eV. Distinct optical conductivity spectra were observed for different samples having precisely the same number of layers. The different spectra arise from the existence of two stable polytypes of FLG, namely, Bernal (AB) stacking and rhombohedral (ABC) stacking. The observed absorption features, reflecting the underlying symmetry of the two polytypes and the nature of the associated van Hone singularities, were reproduced by explicit calculations within a tight-binding model. The findings demonstrate the pronounced effect of stacking order on the electronic structure of FLG.
Keywords
StackingGrapheneMaterials scienceOptical conductivityElectronic structureCondensed matter physicsAbsorption (acoustics)Absorption spectroscopySpectral lineMolecular physicsSpectroscopyPhysicsNanotechnologyOpticsNuclear magnetic resonanceQuantum mechanics
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Publication Info
- Year
- 2010
- Type
- article
- Volume
- 104
- Issue
- 17
- Pages
- 176404-176404
- Citations
- 307
- Access
- Closed
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Cite This
Kin Fai Mak,
Jie Shan,
Tony F. Heinz
(2010).
Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence.
Physical Review Letters
, 104
(17)
, 176404-176404.
https://doi.org/10.1103/physrevlett.104.176404
Identifiers
- DOI
- 10.1103/physrevlett.104.176404