Abstract
This paper reports experimental evidence for an incipient epitaxial growth of vanadium oxide at the TiO2(110) surface. This finding is based on a x-ray photoelectron diffraction and low-energy electron diffraction study of a submonolayer of vanadium deposited at the TiO2(110) surface, performed after annealing at 473 K in ultrahigh vacuum conditions. The data unambiguously show that vanadium atoms occupy selected sixfold-coordinated titanium sites which underbridge oxygen atoms of the topmost layer and that the TiO2(110) long-range surface structural order is preserved.
Keywords
VanadiumEpitaxyAnnealing (glass)Vanadium oxideMaterials scienceDiffractionCrystallographyTitaniumX-ray photoelectron spectroscopyLow-energy electron diffractionOxideElectron diffractionPhysicsNanotechnologyChemistryLayer (electronics)MetallurgyOpticsNuclear magnetic resonance
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Publication Info
- Year
- 1996
- Type
- article
- Volume
- 54
- Issue
- 19
- Pages
- 13464-13467
- Citations
- 40
- Access
- Closed
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Cite This
Mauro Sambi,
G. Sangiovanni,
Gaetano Granozzi
et al.
(1996).
Early stages of epitaxial growth of vanadium oxide at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">TiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>(110) surface studied by photoelectron diffraction.
Physical review. B, Condensed matter
, 54
(19)
, 13464-13467.
https://doi.org/10.1103/physrevb.54.13464
Identifiers
- DOI
- 10.1103/physrevb.54.13464
- PMID
- 9985248