Controlling the Electronic Structure of Bilayer Graphene

Abstract

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.

Keywords

Bilayer grapheneGrapheneBilayerMaterials scienceElectronic structureBand gapSilicon carbideCondensed matter physicsOptoelectronicsHeterojunctionElectronic band structureConduction bandNanotechnologyChemistryElectronPhysicsMembrane

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Publication Info

Year: 2006
Type: article
Volume: 313
Issue: 5789
Pages: 951-954
Citations: 3276
Access: Closed

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APA Style

                            
                                
                                    Taisuke Ohta, 
                                
                                    Aaron Bostwick, 
                                
                                    Thomas Seyller
                                
                                et al.
                            
                            (2006). 
                            Controlling the Electronic Structure of Bilayer Graphene. 
                            Science
                            , 313
                            (5789)
                            , 951-954.
                            https://doi.org/10.1126/science.1130681
                        

Identifiers

DOI: 10.1126/science.1130681