Abstract
The paper reports a theoretical study of scattering of electrons by edges in graphene and its effect on Raman scattering. First, effective models are discussed for translationally invariant and rough edges. Second, they are used in a calculation of the edge-activated Raman D peak intensity and its dependence on the polarization of the incident/scattered light, as well as on the position of the excitation spot. Manifestations of the quasiclassical character of electron motion in Raman scattering are discussed.
Keywords
X-ray Raman scatteringRaman scatteringGrapheneScatteringElectronRaman spectroscopyExcitationPhysicsPolarization (electrochemistry)Mott scatteringCondensed matter physicsOpticsChemistryQuantum mechanicsSmall-angle neutron scattering
Affiliated Institutions
Related Publications
Probing Graphene Edges <i>via</i> Raman Scattering
We present results of a Raman scattering study from the region near the edges of n-graphene layer films. We find that a Raman band (D) located near 1344 cm(-1) (514.5 nm excitat...
Raman Spectroscopy of Graphene Edges
Graphene edges are of particular interest since their orientation determines the electronic properties. Here we present a detailed Raman investigation of graphene flakes with ed...
Angle-resolved and variable impact energy electron vibrational excitation spectroscopy of molecules adsorbed on surfaces
Discrete energy losses occur when a beam of low energy electrons (&lt;30 eV) is scattered from surfaces. For a gas–solid interface, inelastic scattering can occur through ex...
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating. Elect...
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. T...
Publication Info
- Year
- 2009
- Type
- article
- Volume
- 79
- Issue
- 20
- Citations
- 72
- Access
- Closed
External Links
Social Impact
Altmetric
PlumX Metrics
Social media, news, blog, policy document mentions
Citation Metrics
72
OpenAlex
Cite This
D. M. Basko
(2009).
Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene.
Physical Review B
, 79
(20)
.
https://doi.org/10.1103/physrevb.79.205428
Identifiers
- DOI
- 10.1103/physrevb.79.205428