Abstract
The absorption of infrared light associated with the presence of free carriers in germanium has been measured by injecting these carriers across a $p\ensuremath{-}n$ junction at room temperature. The absorption is found to be proportional to the concentration of carriers. The absorption as a function of wavelength shows the same rather sharp maxima previously observed in normal $p$-type germanium. These bands are found to change with temperature. An explanation of this absorption is offered in terms of a degenerate energy band scheme.
Keywords
GermaniumAbsorption (acoustics)InfraredMaterials scienceMaximaFree carrier absorptionWavelengthFree carrierAtomic physicsOptoelectronicsOpticsPhysicsSilicon
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Publication Info
- Year
- 1953
- Type
- article
- Volume
- 91
- Issue
- 6
- Pages
- 1342-1346
- Citations
- 127
- Access
- Closed
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Cite This
Henry Briggs,
R. C. Fletcher
(1953).
Absorption of Infrared Light by Free Carriers in Germanium.
Physical Review
, 91
(6)
, 1342-1346.
https://doi.org/10.1103/physrev.91.1342
Identifiers
- DOI
- 10.1103/physrev.91.1342